EPC2115 – Dual 150 V, 5 A Integrated Gate Drivers eGaN® IC Preliminary Datasheet
FEATURES: Integrated Gate Driver
– Low Propagation Delay EPC2115 devices are supplied only in
passivated die form with solder balls – Up to 7 MHz Operation
– Operates from 5 V Supply Die Size: 2.9 mm x 1.1 mm Dual 88-mΩ, 150-V eGaN FET Low Inductance 2.9 mm x 1.1 mm BGA Schematic Diagram
APPLICATIONS: Wireless Power (Highly Resonant and Inductive) High Frequency DC-DC Conversion DESCRIPTION
The EPC2115 enhancement-mode gallium-nitride (eGaNВ®) monolithic IC contains two monolithic 88-mО©,
150-V GaN power transistors, each with an optimized gate driver, in a low inductance 2.9 mm by 1.1 mm
BGA package.
The EPC2115 enables designers to improve efficiency, save space, and lower costs compared to silicon-based
solutions. The ultra-low capacitance and zero reverse recovery of the eGaN FETs enable efficient operation in
many topologies. The integrated drivers are specifically matched to the GaN device to yield optimal
performance under various operating conditions that is further enhanced due to the small, low inductance
footprint. Monolithic integration eliminates interconnect inductances for higher efficiency at high frequency.
This is especially important for high frequency applications such as resonant wireless power. Subject to Change without Notice www.epc-co.com COPYRIGHT 2018 Page 1 EPC2115 – Dual 150 V, 5 A Integrated Gate Drivers eGaN® IC
ABSOLUTE MAXIMUM RATINGS
Maximum Ratings
VDS Drain-to-Source Voltage (Continuous) V 150 Continuous (TA = 25ЛљC, RОёJA= 32 ЛљC/W) 5 Pulsed (25ЛљC, TPULSE 300 Вµs) 18 VIN Input Signal Voltage 6 TJ Operating Temperature -40 to 150 TSTG Storage Temperature -40 to 150 VCC Supply Voltage ID A
V
ЛљC
V 6 RECOMMENDED OPERATING CONDITIONS
Recommended Operating Conditions
PARAMETER 1 Description MIN TYP MAX UNIT 120 V 5.5 V VDS Drain-Source voltage VCC Driver Supply voltage ICC External driver supply current1 60 mA VIN,Off Input signal for turn-off 0.5 V VIN,On Input signal for turn-on 4.5 V VIN,slew Input signal slew rate 0.25 V/ns TJ Operating Temperature -40 4.5 5 150 В°C For up to maximum operating frequency and to power both FETs THERMAL INFORMATION …
