Datasheet Infineon IRF1405 — Даташит

PD -94969B IRF1405PbF
Typical Applications
l HEXFETВ® Power MOSFET Industrial motor drive D VDSS = 55V Benefits
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l Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175В°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free RDS(on) = 5.3mΩ G ID = 169A† S Description D This Stripe Planar design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of this
HEXFET power MOSFET are a 175В°C junction operating
temperature, fast switching speed and improved repetitive
avalanche rating. These benefits combine to make this
design an extremely efficient and reliable device for use in
a wide variety of applications. G D S TO-220AB Absolute Maximum Ratings …