TPH1R104PB
MOSFETs Silicon N-channel MOS (U-MOSоЂґ-H) TPH1R104PB
1. Applications Automotive Motor Drivers Switching Voltage Regulators 2. Features
(1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 0.95 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (5) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain SOP Advance(WF) Start of commercial production
В©2015-2018
Toshiba Electronic Devices & Storage Corporation 1 2018-03
2018-03-28
Rev.2.0 TPH1R104PB
4. Absolute Maximum Ratings (Note) (Ta = 25 оЂЊ unless otherwise specified)
Characteristics Symbol Rating Unit
V Drain-source voltage VDSS 40 Gate-source voltage VGSS В±20 Drain current (DC) (Note 1) ID 120 Drain current (pulsed) (Note 1) IDP 360 PD 132 Power dissipation (Tc = 25 оЂЊ) Power dissipation (t = 10 s) (Note 2) Power dissipation (t = 10 s) (Note 3) Single-pulse avalanche energy A
W 3.0
0.96 (Note 4) EAS 140 IAS 120 A Channel temperature (Note 5) Tch 175 оЂЊ Storage temperature (Note 5) Tstg -55 to 175 Single-pulse avalanche current Note: mJ Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc). 5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance (Tc = 25 оЂЊ) Channel-to-ambient thermal resistance (t = 10 s) (Note 2) Channel-to-ambient thermal resistance (t = 10 s) (Note 3) Symbol Max Unit Rth(ch-c) 1.13 оЂЊ/W Rth(ch-a) 50 …
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