VEMD8080
www.vishay.com Vishay Semiconductors Silicon PIN Photodiode
FEATURES Package type: surface-mount Package form: top view Dimensions (L x W x H in mm): 4.8 x 2.5 x 0.48 Radiant sensitive area (in mm2): 4.5 0.48 mm low profile package Enhanced sensitivity for visible light Suitable for visible and near infrared radiation Fast response times Angle of half sensitivity: П• = В± 65В° Floor life: 168 h, MSL 3, according to J-STD-020 DESCRIPTION
VEMD8080 is a high speed and high sensitive PIN
photodiode with enhanced sensitivity for visible light. It is a
low profile surface-mount device (SMD) including the chip
with a 4.5 mm2 sensitive area detecting visible and near
infrared radiation. Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912 APPLICATIONS High speed photo detector Wearables PRODUCT SUMMARY
COMPONENT
VEMD8080 Ira (μA) ϕ (deg) λ0.1 (nm) 28 ± 65 350 to 1100 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMD8080 Tape and reel MOQ: 5000 pcs, 5000 pcs/reel Top view Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 В°C, unless otherwise specified)
PARAMETER SYMBOL VALUE Reverse voltage VR 20 V Junction temperature Tj 85 °C Operating temperature range Tamb -40 to +85 °C Storage temperature range Tstg -40 to +85 °C Tsd 260 °C RthJA 350 K/W ESDHBM ≥2 kV Soldering temperature TEST CONDITION According to reflow solder profile Fig. 8 Thermal resistance junction-to-ambient
ESD safety HBM Rev. 1.0, 24-Apr-2018 В± 2000 V, 1.5 kО©, 100 pF, 3 pulses UNIT Document Number: 84565
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For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD8080
www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 В°C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF = 50 mA VF -1.2 1.6 V IR = 100 ОјA, E = 0 V(BR) 20 -V VR = 10 V, E = 0 Iro -0.2 10 nA VR = 0 V, f = 1 MHz, E = 0 CD -47 -pF Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance VR = 3 V, f = 1 MHz, E = 0 CD -17 40 pF Open circuit voltage Ee = 1 mW/cm2, О» = 950 nm Vo -320 -mV Temperature coefficient of Vo Ee = 1 mW/cm2, О» = 950 nm TKVo -3.0 -mV/K Short circuit current Ee = 1 mW/cm2, О» = 950 nm Ik -32 -ОјA Temperature coefficient of Ik Ee = 1 mW/cm2, О» = 950 nm TKIk -0.1 -%/K Ee = 1 mW/cm2, О» = 850 nm, VR = 5 V Ira 23 2 …
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