Datasheet Toshiba SSM3K357R — Даташит

SSM3K357R
MOSFETs Silicon N-Channel MOS SSM3K357R
1. Applications Relay Drivers 2. Features
(1) AEC-Q101 Qualified (Note1). (2) 3.0-V gate drive voltage. (3) Built-in Internal Zener diodes and resistors. (4) HBM: 2-kV class Note 1: For detail information, please contact to our sales. 3. Packaging and Pin Assignment SOT-23F В©2017-2018
Toshiba Electronic Devices & Storage Corporation 1 2018-01-24
Rev.2.0 SSM3K357R
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 оЂЊ)
Characteristics Symbol Rating Unit
V Drain-source voltage VDSS 60 Gate-source voltage VGSS В±12 Drain current (DC)
Drain current (pulsed)
Power dissipation
Power dissipation (t ≤ 10 s) (Note 1) ID 650 (Note 1), (Note 2) IDP 1300 (Note 3) PD 1 (Note 3) PD 1.5 Tch 150  (Note 4) EAS 12.6 mJ Tstg -55 to 150  Channel temperature
Single-pulse avalanche energy
Storage temperature mA
W Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ensure that the channel temperature does not exceed 150 оЂЊ.
Note 2: Pulse width (PW) ≤ 10 Вµs, duty ≤ 1% …