Datasheet New Jersey Semiconductor 2N6755 — Даташит

, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A. TELEPHONE: (201) 376-2922
(212) 227-6005
FAX: (201) 376-8960 2N6755 2N6756
N-Channel Enhancement Mode MOSPOWER
PRODUCT SUMMARY APPLICATIONS Switching Regulators Converters Motor Drivers BVDSS
Volts rDS(ON) 2N6755 60 0.25 2N6756 100 0.18 Part
Number (ohms) PIN i -GatВ»
PIN 2 -Soure.
CASE -Drain (TO-31 ABSOLUTE MAXIMUM RATINGS (Tc = 25В° C unless otherwise noted)
2N67S5 2N6756 Units Drain-Source Voltage 60* 100" V Drain-Gate Voltage (HQS * 1 Mn' 60* 100* V
A Parameter VDS
VDGR
lD@Tc-25В° C Continuous Drain Current *12* В±14* 10 @ TC -100В° C Continuous Drain Current В±8* В±9* A 'DM Pulsed Drain Current^ В±25 В±30 A VGS Gate-Source Voltage2 140 В±40 V
W PO @ TC -25В° C Max. Power Dissipation 75* 75* PD@ TC-IOOВ°C Max. Power Dissipation 30* 30* Junction to Case Linear Derating Factor 0.6* 0.6* W/В° C Junction to
Ambient Linear Derating Factor 0.033 0.033 W/В° C -55 To 150* -55 To 150* В°C 300* 300* В°c W Operating and
Tstg Storage Temperature Range Lead Temperature (1 /16" from case for 10 sees.) 1 Pulse Teat: Pulsewidth < 300usec, Duty Cycle < 2%
2 Exceeds Jedec Values
* Jedec Registered Values
Power Derating Active Region 75 R9JC-1.6rc/W 30 \5
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