SPB18P06P G SIPMOS Power-Transistor
® Product Summary Features V DS P-Channel Enhancement mode -60 V R DS(on),max 0.13 Ω ID -18.6 A Avalanche rated dv /dt rated
PG-TO263-3 175В°C operating temperature Pb-free lead plating; RoHS compliant
В° Halogen-free according to IEC61249-2-21 В° Qualified according to AEC Q101 Type Package SPB18P06PG PG-TO263-3 Tape and reel information
1000 pcs / reel Marking
18P06P Lead free Packing Yes Non dry Maximum ratings, at T j=25 В°C, unless otherwise specified
Parameter Value Symbol Conditions Unit steady state
Continuous drain current ID T A=25 °C -18.7 T A=100 °C -13.2 Pulsed drain current I D,pulse T A=25 °C -74.8 Avalanche energy, single pulse E AS I D=18.7 A, R GS=25 Ω 151 Avalanche energy, periodic limited by
E AR
Tjmax
Reverse diode dv /dt dv /dt Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg A mJ 8
I D=18.7 A, V DS=48 V,
di /dt =-200 A/Вµs,
T j,max=175 В°C T A=25 В°C -6 kV/Вµs В±20 V 81.1 W "-55 . +175" В°C ESD class
260 В°C Soldering temperature 55/175/56 IEC climatic category; DIN IEC 68-1 Rev 1.6 page 1 2012-09-07 SPB18P06P G
Parameter Values Symbol Conditions Unit min. typ. max. Thermal characteristics
Thermal resistance,
junction -case R thJC -1.85 Thermal resistance,
junction -ambient,leaded R thJA -62 SMD verson, device on PCB: R thJA minimal footprint -62 6 cm2 cooling area1) -40 -60 -2.1 3 -4 K/W K/W Electrical characteristics, at T j=25 В°C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250 ВµA Gate threshold voltage V GS(th) V DS=V GS, I D=1000 ВµA Zero gate voltage drain current I DSS V DS=-60 V, V GS=0 V,
T j=25 В°C -0.1 -1 V DS=-60 V, V GS=0 V,
T j=150 В°C -10 -100 V ВµA Gate-source leakage current I GSS V GS=-20 V, V DS=0 V -10 -100 nA Drain-source on-state resistance R DS(on) V GS=-10 V, I D=-13.2 A -101 130 mΩ Transconductance g fs |V DS|>2|I D|R DS(on)max, …
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