Datasheet Analog Devices AD8351SCPZ-EP-R7 — Даташит

Low Distortion
Differential RF/IF Amplifier
AD8351 Data Sheet
FEATURES FUNCTIONAL BLOCK DIAGRAM −3 dB bandwidth of 2.2 GHz for AV = 12 dB
Single resistor programmable gain: 0 dB ≤ AV ≤ 26 dB
Differential interface
Low noise input stage 2.7 nV/√Hz at AV = 10 dB
Low harmonic distortion
−79 dBc second at 70 MHz
−81 dBc third at 70 MHz
OIP3 of 31 dBm at 70 MHz
Single-supply operation: 3 V to 5.5 V
Low power dissipation: 28 mA at 5 V
Adjustable output common-mode voltage
Fast settling and overdrive recovery
Slew rate of 13,000 V/μs
Power-down capability AD8351
PWUP VPOS RGP1
INHI OPHI INLO OPLO
COMM RGP2 0
AD8351 WITH 10dB OF
DRIVING THE
–10 GAIN …

Low Distortion Differential RF/IF Amplifier
AD8351-EP Enhanced Product FUNCTIONAL BLOCK DIAGRAM −3 dB bandwidth of 2.2 GHz for AV = 12 dB
Single-resistor programmable gain: 0 dB ≤ AV ≤ 26 dB
Differential interface
Low noise input stage: 2.70 nV/√Hz at 70 MHz, AV = 10 dB
Low harmonic distortion
−79 dBc second at 70 MHz
−81 dBc third at 70 MHz
Output third-order intercept (OIP3) of 31 dBm at 70 MHz
Single-supply operation: 3 V to 5.5 V
Low power dissipation: 28 mA at 5 V
Adjustable output common-mode voltage
Fast settling and overdrive recovery
Slew rate of 13,000 V/µs
Power-down capability AD8351-EP
PWUP BIAS CELL VOCM
VPOS RGP1 INHI OPHI INLO OPLO COMM RGP2 14821-001 FEATURES Figure 1. ENHANCED PRODUCT FEATURES
Supports defense and aerospace applications (AQEC standard)
Extended industrial temperature range: −55°C to +105°C
Controlled manufacturing baseline
1 assembly/test site
1 fabrication site
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