Datasheet Toshiba TK040N65Z — Даташит

TK040N65Z
MOSFETs Silicon N-Channel MOS (DTMOS) TK040N65Z
1. Applications
• Switching Power Supplies 2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.033 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 2.85 mA) 3. Packaging and Internal Circuit 1: Gate
2: Drain (heatsink)
3: Source TO-247 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified)
Characteristics Symbol Rating Unit Drain-source voltage VDSS 650 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 57 Drain current (pulsed) (Note 1) IDP 228 PD 360 W (Note 2) EAS 702 mJ IAS 14.2 A Reverse drain current (DC) (Note 1) IDR 57 Reverse drain current (pulsed) (Note 1) IDRP 228 Tch 150 Storage temperature Tstg -55 to 150 Mounting torque TOR 0.8 Power dissipation (Tc = 25 ) Single-pulse avalanche energy
Single-pulse avalanche current Channel temperature Note: A  Nm Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc). Start of commercial production
©2017-2018
Toshiba Electronic Devices & Storage Corporation 1 2018-07
2018-07-18
Rev.2.0 TK040N65Z
5. Thermal Characteristics
Characteristics Symbol Max Unit Channel-to-case thermal resistance Rth(ch-c) 0.347 /W Channel-to-ambient thermal resistance Rth(ch-a) 50 Note 1: Ensure that the channel temperature does not exceed 150 .
Note 2: VDD = 90 V, Tch = 25  (initial), L = 6.16 mH, IAS = 14.2 A Note: This transistor is sensitive to electrostatic discharge and should be handled with care. ©2017-2018
Toshiba Electronic Devices & Storage Corporation 2 2018-07-18 …