Datasheet ON Semiconductor FDMS86500L — Даташит

FDMS86500L
N-Channel PowerTrench® MOSFET
60 V, 158 A, 2.5 mΩ
Features General Description „ Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 25 A This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
synchronous or conventional switching PWM controllers. It has
been optimized for low gate charge, low rDS(on), fast switching
speed and body diode reverse recovery performance. „ Max rDS(on) = 3.7 mΩ at VGS = 4.5 V, ID = 20 A
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
„ Next generation enhanced
engineered for soft recovery body diode technology, „ MSL1 robust package design Applications „ 100% UIL tested „ Primary Switch in Isolated DC-DC „ RoHS Compliant „ Synchronous Rectifier
„ Load Switch Bottom Top Pin 1 Pin 1 S D D D S S G S D S D S D G D D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
Symbol
VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage
Drain Current -Continuous ID TC = 25 °C TJ, TSTG ±20 V (Note 5) 158 -Continuous TC = 100 °C (Note 5) 100 TA = 25 °C (Note 1a) 25 -Pulsed PD Units
V -Continuous
Single Pulse Avalanche Energy EAS Ratings
60 Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C (Note 4) 799 (Note 3) 240
104 (Note 1a) Operating and Storage Junction Temperature Range 2.5
-55 to +150 A mJ
W …