Datasheet Infineon 2N6764 — Даташит

PD -90337G IRF150
JANTX2N6764
JANTXV2N6764
[REF:MIL-PRF-19500/543]
100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED
 HEXFET TRANSISTORS
THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number
IRF150 BVDSS
100V RDS(on)
0.055Ω ID
38A The HEXFETtechnology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits. TO-3 Features: n Repetitive Avalanche Ratings
Dynamic dv/dt Rating …