Datasheet ON Semiconductor MMBT5551 — Даташит

2N5551 / MMBT5551
NPN General-Purpose Amplifier
Description
This device is designed for general-purpose high-voltage
amplifiers and gas discharge display drivers. 2N5551 MMBT5551
3 2 TO-92
1 SOT-23
Marking: 3S
1. Base 2. Emitter 3. Collector Ordering Information
Part Number Package Top Mark Packing Method 2N5551TA 5551 TO-92 3L Ammo 2N5551TFR 5551 TO-92 3L Tape and Reel 2N5551TF 5551 TO-92 3L Tape and Reel 2N5551BU 5551 TO-92 3L Bulk MMBT5551 3S SOT-23 3L Tape and Reel © 2009 Semiconductor Components Industries, LLC
2N5551 / MMBT5551 Rev. 2 www.onsemi.com
1 2N5551 / MMBT5551 — NPN General-Purpose Amplifier August 2018 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Units VCEO Collector-Emitter Voltage 160 V VCBO Collector-Base Voltage 180 V VEBO Emitter-Base Voltage 6 V 600 mA -55 to +150 °C Collector current -Continuous IC
TJ, Tstg (2) Junction and Storage Temperature Notes:
2. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
3. These ratings are based on a maximum junction temperature of 150 °C.
These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed
or low-duty cycle operations. Thermal Characteristics
Values are at TA = 25°C unless otherwise noted. Symbol Maximum Parameter Units 2N5551 MMBT5551 Total Device Dissipation 625 350 mW Derate above 25°C 5.0 2.8 mW/°C RθJC Thermal Resistance, Junction to Case 83.3 RθJA Thermal Resistance, Junction to Ambient 200 PD © 2009 Semiconductor Components Industries, LLC
2N5551 / MMBT5551 Rev. 2 °C/W
357 °C/W www.onsemi.com
2 2N5551 / MMBT5551 — NPN General-Purpose Amplifier Absolute Maximum Ratings(2) Values are at TA = 25°C unless otherwise noted. Symbol Parameter Test Condition Min. Max. Units Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0 160 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 μA, IE = 0 180 V IE = 10 μA, IC = 0 6.0 V V(BR)EBO Emitter-Base Breakdown Voltage ICBO Collector Cut-Off Current IEBO Emitter Cut-Off Current VCB = 120 V, IE = 0 50 nA VCB = 120 V, IE = 0, TA = 100°C 50 μA VEB = 4.0 V, IC = 0 50 nA On Characteristics …