Datasheet Infineon BSC016N04LSGATMA1 — Даташит

BSC016N04LS G OptiMOS™3 Power-Transistor Product Summary Features V DS 40 V • Fast switching MOSFET for SMPS R DS(on),max 1.6 mΩ • Optimized technology for DC/DC converters ID 100 A • Qualified according to JEDEC1) for target applications PG-TDSON-8 • N-channel
• Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• 100% Avalanche tested
• Pb-free plating; RoHS compliant;
•Halogen-free according to IEC61249-2-21
Type Package Marking BSC016N04LS G PG-TDSON-8 016N04LS Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Symbol Conditions Continuous drain current ID Value V GS=10 V, T C=25 °C 100 V GS=10 V, T C=100 °C 100 V GS=4.5 V, T C=25 °C 100 V GS=4.5 V,
T C=100 °C 100 V GS=10 V, T A=25 °C,
R thJA=50 K/W 2) Unit
A 31 Pulsed drain current3) I D,pulse T C=25 °C 400 Avalanche current, single pulse 4) I AS T C=25 °C 50 Avalanche energy, single pulse E AS I D=50 A, R GS=25 Ω 295 mJ Gate source voltage V GS ±20 V 1) Rev. 2.0 J-STD20 and JESD22 page 1 2011-03-23 BSC016N04LS G
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Symbol Conditions Power dissipation P tot Value T C=25 °C 139 T A=25 °C, T j, T stg -55 . 150 IEC climatic category; DIN IEC 68-1 Parameter W 2.5 R thJA=50 K/W 2)
Operating and storage temperature Unit °C 55/150/56 Values Symbol Conditions Unit min. typ. max. -0.9 Thermal characteristics
Thermal resistance, junction -case R thJC bottom
top Device on PCB R thJA 6 cm2 cooling area2) K/W 20
-50 40 -Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=85 µA 1.2 -2 Zero gate voltage drain current I DSS V DS=40 V, V GS=0 V,
T j=25 °C -0.1 1 V DS=40 V, V GS=0 V,
T j=125 °C -10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V -10 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=50 A -1.8 2.3 mΩ V GS=10 V, I D=50 A -1.3 1.6 -1.5 -Ω 95 190 -S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, …