Datasheet Toshiba SSM6N813R,LF — Даташит

SSM6N813R
MOSFETs Silicon N-Channel MOS SSM6N813R
1. Applications
• Power Management Switches 2. Features
(1) AEC-Q101 qualified (Note 1) (2) 175  MOSFET (3) 4.5 V drive (4) Low drain-source on-resistance
: RDS(ON) = 110 mΩ (typ.) (@VGS = 4.5 V)
RDS(ON) = 88 mΩ (typ.) (@VGS = 10 V) (5) HBM: 2-kV class
Note 1: For detail information, please contact to our sales. 3. Packaging and Pin Assignment 1: Source 1
2: Gate 1
3: Drain 2
4: Source 2
5: Gate 2
6: Drain 1 TSOP6F Start of commercial production
©2018
Toshiba Electronic Devices & Storage Corporation 1 2018-04
2018-09-06
Rev.3.0 SSM6N813R
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
(Q1,Q2 Common)
Characteristics Symbol Rating Unit Drain-source voltage VDSS 100 V Gate-source voltage VGSS ±20 Drain current (DC)
Drain current (pulsed)
Power dissipation
Power dissipation (t ≤ 1 s) (Note 1) ID 3.5 (Note 1), (Note 2) IDP 7 (Note 3) PD 1.5 (Note 3) Single-pulse avalanche energy (Note 4) Avalanche current A …