Datasheet Infineon AUIRF7309Q — Даташит

AUTOMOTIVE GRADE  
Features
 Advanced Planar Technology
 Low On-Resistance
 Logic Level Gate Drive
 Dual N and P Channel MOSFET
 Dynamic dv/dt Rating
 150°C Operating Temperature
 Fast Switching
 Lead-Free, RoHS Compliant
 Automotive Qualified *  
S1 Package Type AUIRF7309Q SO-8 N-CHANNEL MOSFET
1
8 N-CH P-CH 30V -30V 0.05 0.10 4.7A -3.5A D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 VDSS
RDS(on) max. P-CHANNEL MOSFET ID Top View Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications. Base part number AUIRF7309Q SO-8 …