Datasheet Toshiba 7UL1G86FU — Даташит

7UL1G86FU
CMOS Digital Integrated Circuits Silicon Monolithic 7UL1G86FU
1. Functional Description
• 2-Input Exclusive-OR Gate 2. Features
(1) High output current: ±8.0 mA (min) at VCC = 3.0 V (2) Super high speed operation: tpd = 2.5 ns (typ.) at VCC = 3.3 V, CL = 15 pF (3) Operation voltage range: VCC = 0.9 to 3.6 V (4) 3.6 V tolerant inputs (5) 3.6 V power down protection output 3. Packaging USV 4. Marking and Pin Assignment Marking Pin Assignment (Top view) Start of commercial production
©2018
Toshiba Electronic Devices & Storage Corporation 1 2018-10
2018-05-22
Rev.1.0 7UL1G86FU
5. IEC Logic Symbol 6. Truth Table
A B Y L L L L H H H L H H H L 7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Supply voltage
Input voltage Symbol Note VCC
VIN DC output voltage VOUT Input diode current IIK Rating Unit -0.5 to 4.6 V -0.5 to 4.6 V (Note 1) -0.5 to 4.6 V (Note 2) -0.5 to VCC + 0.5 (Note 3) -20 mA -20 mA ±25 mA Output diode current IOK DC output current IOUT VCC/ground current ICC ±50 mA Power dissipation PD 200 mW Storage temperature Tstg -65 to 150  Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc). …