Datasheet Infineon SMBT3904E6327HTSA1 — Даташит

SMBT3904.MMBT3904
NPN Silicon Switching Transistors
• High DC current gain: 0.1 mA to 100 mA
• Low collector-emitter saturation voltage
• For SMBT3904S:
Two (galvanic) internal isolated transistors
with good matching in one package
• Complementary types: SMBT3906. MMBT3906
• SMBT3904S: For orientation in reel
see package information below
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101 Type Marking Pin Configuration SMBT3904/MMBT3904 s1A 1=B SMBT3904S s1A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 2=E 3=C -Package
-SOT23 Maximum Ratings
Parameter Symbol Collector-emitter voltage VCEO 40 Collector-base voltage VCBO 60 Emitter-base voltage VEBO 6 Collector current IC Total power dissipation-Ptot Value 200
330 TS ≤ 115°C, SOT363, SMBT3904S 250
Tj Storage temperature Tstg Thermal Resistance
Parameter Symbol Junction -soldering point1) V mA
mV TS ≤ 71°C, SOT23, SMBT3904
Junction temperature Unit 150 °C -65 . 150
Value RthJS SMBT3904/MMBT3904 ≤ 240 SMBT3904S ≤ 140 Unit
K/W 1For calculation of R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2012-08-21 SMBT3904.MMBT3904
Electrical Characteristics at TA = 25°C, unless otherwise specified …