Datasheet Infineon SMBT3904UPNE6327HTSA1 — Даташит

SMBT3904.PN
NPN / PNP Silicon Switching Transistor Array
• High current gain
• Low collector-emitter saturation voltage
• Two (galvanic) internal isolated NPN / PNP
transistor in one package
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101 SMBT3904PN
SMBT3904UPN
C1 B2 E2 6 5 4 TR2
TR1 1 2 3 E1 B1 C2
EHA07177 Type Marking Pin Configuration Package SMBT3904PN s3P 1=E 2=B 3=C 4=E 5=B 6=C SOT363 SMBT3904UPN s3P 1=E 2=B 3=C 4=E 5=B 6=C SC74 Maximum Ratings
Parameter Symbol Collector-emitter voltage VCEO 40 Collector-base voltage VCBO 40 Emitter-base voltage VEBO 6 Collector current IC Total power dissipation-Ptot Value 200
250 TS ≤ 105 °C, SMBT3904UPN 330
Tj Storage temperature Tstg 1 V mA
mW TS ≤ 115 °C, SMBT3904PN
Junction temperature Unit 150 °C -65 . 150 2012-08-21 SMBT3904.PN
Thermal Resistance
Parameter
Junction -soldering point1) Symbol
RthJS Value SMBT3904PN ≤ 140 SMBT3904UPN ≤ 135 Unit
K/W Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol …