Datasheet Analog Devices HMC740 — Даташит

HMC740ST89E
v02.0813 InGaP HBT ACTIVE BIAS
MMIC AMPLIFIER, 0.05 – 3 GHz AMPLIFIERS -DRIVER & GAIN BLOCK -SMT 8 Typical Applications Features The HMC740ST89E is ideal for: P1dB Output Power: +18 dBm • Cellular/3G & WiMAX/4G Gain: 15 dB • Fixed Wireless & WLAN Output IP3: +40 dBm • CATV, Cable Modem & DBS Cascadable 50 Ohm I/Os • Microwave Radio & Test Equipment Single Supply: +5V • IF & RF Applications Industry Standard SOT89 Package
Robust 1000V ESD, Class 1C
Stable Current Over Temperature
Active Bias Network Functional Diagram The HMC740ST89E is an InGaP Heterojunction
Bipolar Transistor (HBT) Gain Block MMIC SMT
amplifier covering 0.05 to 3 GHz. Packaged in an
industry standard SOT89, the amplifier can be used
as a cascadable 50 Ohm RF or IF gain stage as
well as a PA or LO driver with up to +18 dBm output
power. The HMC740ST89E offers 15 dB of gain with
a +40 dBm output IP3 at 100 MHz, and can operate
directly from a +5V supply. The HMC740ST89E
exhibits excellent gain and output power stability over
temperature, while requiring a minimal number of
external bias components. Electrical Specifications, Vcc = 5V, TA = +25° C
Parameter Min. Frequency Range
Gain Typ. Max. Min. 0.05 -1
12 15 Gain Flatness ±0.1 Gain Variation over Temperature 0.003 11 Typ. Max. 0.05 -3 GHz 15 dB ±0.7
0.006 Units 0.003 dB
0.006 dB/ °C Input Return Loss 18 15 dB Output Return Loss 18 18 dB Reverse Isolation 20 21 dB 17 dBm Output Power for 1 dB Compression (P1dB) 8-1 General Description 15.5 18 14.5 Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing) 38 32 dBm Noise Figure 3.5 3.5 dB Supply Current (Icq) 88 88 mA Information furnished by Analog Devices is believed to be accurate and reliable. However, no …