Datasheet Vishay SI4480EY-T1-E3 — Даташит

Si4480EY
Vishay Siliconix N-Channel 80-V (D-S) MOSFET PRODUCT SUMMARY
VDS (V)
80 rDS(on) (W) ID (A) 0.035 @ VGS = 10 V 6.2 0.040 @ VGS = 6.0 V 5.8 D SO-8
S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View
S
Ordering Information: Si4480EY
Si4480EY-T1 (with Tape and Reel) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Drain-Source Voltage VDS 80 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 175_C)a, b TA = 25_C
TA = 70_C Pulsed Drain Current
Continuous Source Current (Diode Conduction)a, b TA = 70_C Operating Junction and Storage Temperature Range V 6.2
ID 5.2 IDM 40 IS 2.5 TA = 25_C Maximum Power Dissipationa, b Unit A 3
PD W 2.1 TJ, Tstg _C -55 to 175 THERMAL RESISTANCE RATINGS
Parameter Symbol
t v 10 sec M i
Maximum
JJunction-to-Ambient
ti t A bi ta
Maximum Junction-to-Lead Steady State
Steady State RthJA
RthJL Typical Maximum 40 50 85 100 20 24 Unit _C/W
C/W Notes
a. Surface Mounted on FR4 Board, t v 10 sec. …