DISCRETE SEMICONDUCTORS DATA SHEET
dbook, halfpage M3D186 BC556; BC557
PNP general purpose transistors
Product data sheet
Supersedes data of 1999 Apr 15 2004 Oct 11 NXP Semiconductors Product data sheet PNP general purpose transistors BC556; BC557 FEATURES PINNING • Low current (max. 100 mA) PIN • Low voltage (max. 65 V).
APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector • General purpose switching and amplification.
DESCRIPTION handbook, halfpage1 PNP transistor in a TO-92; SOT54 plastic package.
NPN complements: BC546 and BC547. 3 2
3 2
1 MAM281 Fig.1 Simplified outline (TO-92; SOT54)
and symbol. ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BC556 SC-43A DESCRIPTION VERSION plastic single-ended leaded (through hole) package; 3 leads SOT54 BC557
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO VCEO PARAMETER
collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter BC556 − −80 V BC557 − −50 V BC556 − −65 V BC557 − −45 V − −5 V collector-emitter voltage open base VEBO emitter-base voltage IC collector current (DC) − −100 mA ICM peak collector current − −200 mA IBM peak base current − −200 mA Ptot total power dissipation − 500 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb ambient temperature −65 +150 °C 2004 Oct 11 open collector Tamb ≤ 25 °C 2 NXP Semiconductors Product data sheet PNP general purpose transistors BC556; BC557 THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a) PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 VALUE UNIT 250 K/W Note
1. Transistor mounted on an FR4 printed-circuit board. …
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