Datasheet Fairchild BC849 — Даташит

BC846-BC850 tm NPN Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
• Suitable for automatic insertion in thick and thin-film circuits
3 • Low Noise: BC849, BC850
• Complement to BC856 . BC860 2
1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings*
Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage : BC846
: BC847/850
: BC848/849 80
50
30 V
V
V VCEO Collector-Emitter Voltage : BC846
: BC847/850
: BC848/849 65
45
30 V
V
V VEBO Emitter-Base Voltage 6
5 V
V IC Collector Current (DC) 100 mA PC Collector Power Dissipation 310 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C : BC846/847
: BC848/849/850 * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics* Ta=25°C unless otherwise noted …