Datasheet ON Semiconductor MMBTA56 — Даташит

MMBTA56 / PZTA56
PNP General-Purpose Amplifier
Description
This device is designed for general-purpose amplifier
applications at collector currents to 300 mA. Sourced
from process 73. C C E E
SOT-23
Mark: 2G C
SOT-223 B Figure 1. MMBTA56 Device Package B Figure 2. PZTA56 Device Package Ordering Information
Part Number Marking Package Packing Method MMBTA56 2G SOT-23 3L Tape and Reel PZTA56 A56 SOT-223 4L Tape and Reel Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Value Unit VCES Collector-Emitter Voltage -80 V VCBO Collector-Base Voltage -80 V VEBO Emitter-Base Voltage -4.0 V Collector Current -Continuous -500 mA -55 to +150 °C IC
TJ , TSTG Parameter Operating and Storage Junction Temperature Range Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations. © 1997 Fairchild Semiconductor Corporation
MMBTA56 / PZTA56 Rev. 1.4 www.fairchildsemi.com MMBTA56 / PZTA56 — PNP General-Purpose Amplifier February 2015 Values are at TA = 25°C unless otherwise noted. Symbol
PD
RθJA Max. Parameter (3) Unit PZTA56(4) MMBTA56 Total Device Dissipation 350 1000 mW Derate Above 25°C 2.8 8.0 mW/°C Thermal Resistance, Junction-to-Ambient 357 125 °C/W Notes:
3. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm2.
4. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics
Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit V(BR)CEO Collector-Emitter Breakdown
Voltage(5) IC = -1.0 mA, IB = 0 -80 V V(BR)CBO Collector-Base Breakdown Voltage IC = -100 μA, IE = 0 -60 V V(BR)EBO Emitter-Base Breakdown Voltage IE = -100 μA, IC = 0 -4.0 V ICEO Collector Cut-Off Current VCE = -60 V, IB = 0 -0.1 μA ICBO Collector Cut-Off Current VCB = -80 V, IE = 0 -0.1 μA hFE DC Current Gain IC = -100 mA, IB = -10 mA -0.25 V -1.2 V IC = -10 mA, VCE = -1.0 V 100 IC = -100 mA, VCE = -1.0 V 100 VCE(sat) Collector-Emitter Saturation …