Datasheet Vishay SQJ457EP-T1_GE3 — Даташит

SQJ457EP
www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 °C MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) • TrenchFET® power MOSFET -60 RDS(on) () at VGS = -10 V 0.0250 RDS(on) () at VGS = -4.5 V 0.0350 ID (A) • AEC-Q101 qualified
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912 -36 Configuration Single Package PowerPAK SO-8L S PowerPAK® SO-8L Single G D 6. 15 m m m
1 13 m 4
G 5. Top View 3
S 2
S 1
S D P-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS -60 Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C
TC = 125 °C Continuous Source Current (Diode Conduction) a
Pulsed Drain Current b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation b L = 0.1 mH
TC = 25 °C
TC = 125 °C Operating Junction and Storage Temperature Range ID -36 IS -60
-100 IAS -36 EAS 64.8 TJ, Tstg Soldering Recommendations (Peak Temperature) d, e V -21 IDM PD UNIT 68
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