Datasheet Infineon BCV61C — Даташит

Производитель	Infineon
Серия	BCV61C

Двойной кремниевый NPN-транзистор

Datasheets

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NPN Silicon Double Transistor

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BCV61
NPN Silicon Double Transistor
• To be used as a current mirror
• Good thermal coupling and VBE matching 3
2 • High current gain 4
1 • Low collector-emitter saturation voltage
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101 C1 (2) C2 (1) Tr.1 Tr.2 E1 (3) E2 (4)
EHA00012 Type Marking Pin Configuration Package BCV61B 1Ks 1 = C2 2 = C1 3 = E1 4 = E2 SOT143 BCV61C 1Ls 1 = C2 2 = C1 3 = E1 4 = E2 SOT143 Maximum Ratings
Parameter Symbol Collector-emitter voltage VCEO 30 VCBO 30 Emitter-base voltage VEBS 6 DC collector current IC 100 Peak collector current, tp < 10 ms ICM 200 Base peak current (transistor T1) IBM 200 Total power dissipation, TS = 99 °C Ptot 300 mW Junction temperature Tj 150 °C Storage temperature Tstg Value Unit
V (transistor T1)
Collector-base voltage (open emitter)
(transistor T1)
mA -65 . 150 Thermal Resistance Junction -soldering point1)
1For calculation of R RthJS ≤170 K/W thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2011-10-13 BCV61 Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit min. typ. max. V(BR)CEO 30 -V(BR)CBO 30 -V(BR)EBO 6 -ICBO -15 nA ICBO -5 µA hFE 100 -IC = 2 mA, VCE = 5 V, BCV61B 200 290 450 IC = 2 mA, VCE = 5 V, BCV61C 420 520 800 DC Characteristics of T1 Collector-emitter breakdown voltage V IC = 10 mA, IB = 0 Collector-base breakdown voltage
IC = 10 µA, IE = 0 Emitter-base breakdown voltage
IE = 10 µA, IC = 0 Collector cutoff current
VCB = 30 V, IE = 0 Collector cutoff current
VCB = 30 V, IE = 0 , TA = 150 °C DC current gain1)
IC = 0.1 mA, VCE = 5 V DC current gain1) hFE Collector-emitter saturation voltage1) mV VCEsat IC = 10 mA, IB = 0.5 mA -90 250 IC = 100 mA, IB = 5 mA -200 600 IC = 10 mA, IB = 0.5 mA -700 -IC = 100 mA, IB = 5 mA -900 -IC = 2 mA, VCE = 5 V 580 660 700 IC = 10 mA, VCE = 5 V -770 Base-emitter saturation voltage1) VBEsat Base-emitter voltage1) VBE(ON) 1Puls test: t ≤ 300 µs, D = 2% 2 2011-10-13 BCV61 Electrical Characteristics at T A = 25°C, unless otherwise specified.
Symbol
Values …

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