Datasheet ON Semiconductor BC516 — Даташит

BC516 — PNP Darlington Transistor BC516
PNP Darlington Transistor
Features
• This device is designed for applications reguiring extremely
high current gain at currents to 1 A.
• Sourced from process 61.
1
TO-92
1. Collector 2. Base 3. Emitter Ordering Information
Part Number Top Mark Package Packing Method BC516-D27Z BC516 TO-92 3L Tape and Reel Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Value Unit VCEO Collector-Emitter Voltage -30 V VCBO Collector-Base Voltage -40 V VEBO Emitter-Base Voltage -10 V Collector Current -Continuous -1 A -55 to +150 °C IC
TJ, TSTG Parameter Operating and Storage Junction Temperature Range © 2002 Semiconductor Components Industries, LLC.
September-2017, Rev. 2 Publication Order Number:
BC516-D27Z/D Values are at TA = 25°C unless otherwise noted. Symbol
PD Parameter Max. Unit Total Device Dissipation, TA = 25°C 625 mW RθJA Thermal Resistance, Junction-to-Ambient 200 °C/W RθJC Thermal Resistance, Junction-to-Case 83.3 °C/W Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics(2)
Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit VCEO Collector-Emitter Breakdown Voltage IC = -2 mA, IB = 0 -30 V VCBO Collector-Base Breakdown Voltage IC = -100 μA, IE = 0 -40 V VEBO Emitter-Base Breakdown Voltage IE = -10 μA, IC = 0 -10 V ICBO Collector Cut-Off Current VCB = -30 V, IE = 0 DC Current Gain IC = -20 mA, VCE = -2 V VCE(sat) Collector-Emitter Saturation Voltage IC = -100 mA, IB = -0.1 mA VBE(on) Base-Emitter On Voltage IC = -10 mA, VCE = -5 V Current Gain -Bandwidth Product(3) IC = -10 mA, VCE = -5 V,
f = 100 MHz hFE fT Notes:
2. Pulse test: pulse width ≤ 2.0%
3. fT = IhfeI ftest www.onsemi.com
2 -100 nA -1 V -1.4 V 30,000 200 MHz BC516 — PNP Darlington Transistor Thermal Characteristics(1) BC516 — PNP Darlington Transistor Physical Dimensions Figure 1. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form www.onsemi.com
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