Datasheet Toshiba 2SC5200-O(S1,F — Даташит

Производитель	Toshiba
Серия	2SC5200
Модель	2SC5200-O(S1,F

Power transistor for high-speed switching applications

Datasheets

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PDF, 208 Кб, Язык: анг., Файл опубликован: янв 2016, Страниц: 5
Silicon NPN Triple Diffused Type

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2SC5200
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200
Power Amplifier Applications • Unit: mm High breakdown voltage: VCEO = 230 V (min) • Complementary to 2SA1943 • Suitable for use in 100-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter voltage VCEO 230 V Emitter-base voltage VEBO 5 V Collector current IC 15 A Base current IB 1.5 A PC 150 W Tj 150 °C Tstg −55 to 150 °C Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range JEDEC ― JEITA ― TOSHIBA
2-21F1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 9.75 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc). Start of commercial production 1994-09
1 2016-01-07 2SC5200
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 230 V, IE = 0 A ― ― 5.0 μA Emitter cut-off current IEBO VEB = 5 V, IC = 0 A ― ― 5.0 μA V (BR) CEO IC = 50 mA, IB = 0 A 230 ― ― V VCE = 5 V, IC = 1 A 55 ― 160 hFE (2) VCE = 5 V, IC = 7 A 35 60 ― VCE (sat) IC = 8 A, IB = 0.8 A ― 0.4 3.0 V Base-emitter voltage VBE VCE = 5 V, IC = 7 A ― 1.0 1.5 V Transition frequency fT VCE = 5 V, IC = 1 A ― 30 ― MHz VCB = 10 V, IE = 0 A, f = 1 MHz ― 200 ― pF Collector-emitter breakdown voltage hFE (1)
(Note) DC current gain Collector-emitter saturation voltage Collector output capacitance Note: hFE (1) classification Cob R: 55 to 110, O: 80 to 160 Marking Part No. (or abbreviation code)
TOSHIBA 2SC5200
Lot No. JAPAN …

Цены

Купить 2SC5200-O(S1,F на РадиоЛоцман.Цены — от 50 до 958 ₽ 36 предложений от 19 поставщиков Биполярный транзистор, NPN, 230 В, 15 А, 150 Вт, (Комплементарная пара 2SА1943)
AliExpress Весь мир	Новинка копия 5 пар 2saeas aeas 2SA1943-O + 2SC5200 C5200 2SC5200-O TO-3PL хорошее качество NPN + PNP усилитель мощности транзистор	50 ₽
Стандарт СИЗ Россия	2SC5200-O Toshiba	55 ₽
ChipWorker Весь мир	2SC5200-O(S1,F,S) Toshiba	285 ₽
ЭлектроПласт- Екатеринбург Россия	2SC5200-O+TOS Toshiba	по запросу

Выбираем схему BMS для заряда литий-железофосфатных (LiFePO4) аккумуляторов

Корпус / Упаковка / Маркировка

Код корпуса производителя

TO-3P(L)

Параметры

Application Scope	Audio amplifier output stage 100-W
Assembly bases	China / Japan
Collector Emitter Saturation Voltage (Max) [I_B=800mA I_C=8A]	3.0 Ⅴ
Complementary Product	2SA1943
DC Current Gain hFE (Max) [I_C=1A V_CE=5V]	160 -
DC Current Gain hFE (Min) [I_C=1A V_CE=5V]	55 -
Polarity	NPN
Transition frequency (Typ.) [I_C=1A V_CE=5V]	30 МГц

Экологический статус

RoHS

Совместим

Модельный ряд

Серия: 2SC5200 (1)

2SC5200-O(S1,F

Классификация производителя

Bipolar Transistors > Bipolar Transistors

Варианты написания:

2SC5200O(S1,F, 2SC5200 O(S1,F, 2SC5200-O(S1F, 2SC5200-O(S1 F