Datasheet ON Semiconductor FDS6575 — Даташит

FDS6575
P-Channel 2.5V Specified PowerTrench MOSFET
General Description Features This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 8V). • –10 A, –20 V. RDS(ON) = 13 mΩ @ V GS = –4.5 V
RDS(ON) = 17 mΩ @ V GS = –2.5 V Applications • High performance trench technology for extremely
low RDS(ON) • Low gate charge • Power management • High current and power handling capability • Load switch
• Battery protection DD DD DD
DD SO-8
Pin 1 SO-8 G
G
S
S
SS
SS Absolute Maximum Ratings
Symbol 5 4 6 3 7 2 8 1 TA=25oC unless otherwise noted Ratings Units V DSS Drain-Source Voltage Parameter –20 V V GSS Gate-Source Voltage ±8 V ID Drain Current –10 A PD Power Dissipation for Single Operation – Continuous (Note 1a) – Pulsed –50
(Note 1a) 2.5 (Note 1b) 1.5 (Note 1c) TJ , TSTG Operating and Storage Junction Temperature Range W 1.2
–55 to +175 °C Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1c) 125 °C/W RθJ C Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity FDS6575 FDS6575 13’’ 12mm 2500 units 2001 Fairchild Semiconductor Corporation FDS6575 Rev F(W) FDS6575 September 2001 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics
BV DSS …