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650 V high-side and low-side gate driver with integrated bootstrap diode
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2ED2106 (4) S06F (J)
2ED2106 (4) S06F (J) 650 V high-side and low-side gate driver with integrated bootstrap
diode
Features Product summary •
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• VS_OFFSET = 650 V max
Io+pk / Io-pk (typ.) = + 0.29 A/ -0.7 A
VCC = 10 V to 20 V
Delay matching = 35 ns max.
Propogation delay = 200 ns
tON / tOFF (typ.) = 200 ns/ 200 ns •
• Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology …
