Datasheet Toshiba TK2P90E — Даташит

TK2P90E
MOSFETs Silicon N-Channel MOS (π-MOS) TK2P90E
1. Applications
• Switching Voltage Regulators 2. Features
(1) Low drain-source on-resistance: RDS(ON) = 4.7 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 1: Gate
2: Drain(Heatsink)
3: Source DPAK 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Symbol Rating Unit Drain-source voltage VDSS 900 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 2 Drain current (pulsed) (Note 1) IDP 6 PD 80 W (Note 2) EAS 157 mJ IAR 2 A Reverse drain current (DC) (Note 1) IDR 2 Reverse drain current (pulsed) (Note 1) Power dissipation (Tc = 25) Single-pulse avalanche energy
Avalanche current A IDRP 6 Channel temperature Tch 150 Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc). Start of commercial production 1 2014-02
2014-09-17
Rev.3.0 TK2P90E
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance Symbol Max Unit Rth(ch-c) 1.56 /W Note 1: Ensure that the channel temperature does not exceed 150 .
Note 2: VDD = 90 V, Tch = 25 (initial), L = 72.3 mH, RG = 25 Ω, IAR = 2 A Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2 2014-09-17
Rev.3.0 TK2P90E
6. Electrical Characteristics …