Datasheet Infineon IRLB8721PBF — Даташит

PD -97390 IRLB8721PbF
HEXFET® Power MOSFET Applications
l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck
Converters for Computer Processor Power
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use l Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l Lead-Free VDSS
RDS(on) max
Qg (typ.)
30V 8.7m @VGS = 10V 7.6nC : D G D S TO-220AB
IRLB8721PbF
G D S Gate Drain Source Absolute Maximum Ratings
Parameter Max. VDS Drain-to-Source Voltage 30 VGS Gate-to-Source Voltage ± 20 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 62 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 44 IDM Pulsed Drain Current 250 PD @TC = 25°C Maximum Power Dissipation PD @TC = 100°C Maximum Power Dissipation TJ
TSTG c g
g Units
V A 65 W 33 Linear Derating Factor 0.43 Operating Junction and -55 to + 175 W/°C Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw 300 (1.6mm from case) …