Datasheet Vishay SI9407AEY-T1-GE3 — Даташит

Si9407AEY
Vishay Siliconix P-Channel 60-V (D-S), 175 °C MOSFET FEATURES PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) -60 ID (A) 0.120 at VGS = -10 V ± 3.5 0.15 at VGS = -4.5 V ± 3.1 • Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• 175 °C Maximum Junction Temperature
• Compliant to RoHS Directive 2002/95/EC SO-8 S S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View
D
Ordering Information: Si9407AEY-T1-E3 (Lead (Pb)-free)
Si9407AEY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Drain-Source Voltage VDS -60 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C
TA = 70 °C Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range TA = 25 °C
TA = 70 °C ID V ± 3.5
± 3.0 IDM ± 30 IS -2.5 PD Unit 3.0
2.1 A W TJ, Tstg -55 to 175 Symbol Limit Unit RthJA 50 °C/W °C THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Notes:
a. Surface Mounted on FR4 board, t ≤ 10 s. Document Number: 70742
S09-1341-Rev. E, 13-Jul-09 www.vishay.com …