Datasheet NXP PSMN0R9-25YLC,115 — Даташит

PSMN0R9-25YLC
N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using
NextPower technology
Rev. 2 — 4 July 2011 Product data sheet 1. Product profile
1.1 General description
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment. 1.2 Features and benefits High reliability Power SO8 package,
qualified to 175°C Optimised for 4.5V Gate drive utilising
NextPower Superjunction technology Ultra low QG, QGD and QOSS for high
system efficiencies at low and high
loads Ultra low Rdson and low parasitic
inductance 1.3 Applications DC-to-DC converters Power OR-ing Lithium-ion battery protection Server power supplies Load switching Sync rectifier 1.4 Quick reference data
Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C -25 V ID drain current Tmb = 25 °C; see Figure 1 -100 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 -272 W Tj junction temperature -55 -175 °C VGS = 4.5 V; ID = 25 A;
Tj = 25 °C; see Figure 12 -0.95 1.25 mΩ VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 12 -0.75 0.99 mΩ [1] Static characteristics
RDSon drain-source on-state
resistance PSMN0R9-25YLC Nexperia N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology Table 1.
Symbol Quick reference data …continued
Parameter Conditions Min Typ Max Unit Dynamic characteristics
QGD gate-drain charge VGS = 4.5 V; ID = 25 A;
VDS = 12 V; see Figure 14;
see Figure 15 -14 -nC QG(tot) total gate charge VGS = 4.5 V; ID = 25 A; …