Datasheet ON Semiconductor FDN304P — Даташит

FDN304P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description Features This P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications. • –2.4 A, –20 V. Applications • Fast switching speed • Battery management • High performance trench technology for extremely
low RDS(ON) • Load switch
• Battery protection RDS(ON) = 52 mΩ @ VGS = –4.5 V
RDS(ON) = 70 mΩ @ VGS = –2.5 V
RDS(ON) = 100 mΩ @ VGS = –1.8 V • SuperSOTTM -3 provides low RDS(ON) and 30% higher
power handling capability than SOT23 in the same
footprint D D S
S G
TM SuperSOT -3 G Absolute Maximum Ratings
Symbol TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter –20 V VGSS Gate-Source Voltage ±8 V ID Drain Current –2.4 A – Continuous (Note 1a) – Pulsed
PD –10 Maximum Power Dissipation TJ, TSTG (Note 1a) 0.5 (Note 1b) 0.46 W –55 to +150 °C (Note 1a) 250 °C/W (Note 1) 75 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information
Device Marking
304P 2001 Fairchild Semiconductor Corporation Device Reel Size Tape width Quantity FDN304P 7’’ 8mm 3000 units FDN304P Rev C(W) FDN304P January 2001 Electrical Characteristics
Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units –13 mV/°C Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA ∆BVDSS
∆TJ
IDSS Breakdown Voltage Temperature …