Datasheet ON Semiconductor SMMBFJ177LT1G — Даташит

MMBFJ177LT1G,
SMMBFJ177LT1G
JFET Chopper
P−Channel − Depletion
www.onsemi.com Features • S Prefix for Automotive and Other Applications Requiring Unique
• 2 SOURCE Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant 3
GATE 1 DRAIN MAXIMUM RATINGS
Rating Symbol Value Unit Drain−Gate Voltage VDG −25 Vdc Gate−Source Voltage VGS 25 Vdc 3 SOT−23 (TO−236)
CASE 318−08
STYLE 10 1
2 Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected. MARKING DIAGRAM THERMAL CHARACTERISTICS
Total Device Dissipation FR− 5 Board
(Note 1)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature PD 225 mW 1.8 mW/°C RqJA 556 °C/W TJ, Tstg −55 to +150 °C 1. FR− 5 = 1.0 0.75 0.062 in. 6Y MG …