Datasheet ON Semiconductor MMBFJ175 — Даташит

Description
This device is designed for low-level analog switching
sample-and-hold circuits and chopper-stabilized
amplifiers. Sourced from process 88. G TO-92
12 1 3 Straight Lead
Bulk Packing 2 1. Drain
2. Gate
3. Source 3 S
SOT-23
D
Mark: 6W / 6X / 6Y
Note: Source & drain are interchangeable. Bent Lead
Tape & Reel
Ammo Packing Figure 1. J175 / J176 Device Package Figure 2. MMBFJ175 / 176 / 177 Device Package Ordering Information
Part Number Marking Package Packing Method J175-D26Z J175 TO-92 3L Tape and Reel J176-D74Z J176 TO-92 3L Ammo MMBFJ175 6W SOT-23 3L Tape and Reel MMBFJ176 6X SOT-23 3L Tape and Reel MMBFJ177 6Y SOT-23 3L Tape and Reel ©1997 Semiconductor Components Industries, LLC.
October-2017, Rev. 2 Publication Order Number:
J175/D J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 — P-Channel Switch J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177
P-Channel Switch Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Parameter Symbol Value Unit VDG Drain-Gate Voltage -30 V VGS Gate-Source Voltage 30 V IGF Forward Gate Current 50 mA -55 to + 150 °C TJ, TSTG Operating and Storage Junction Temperature Range Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or lowduty cycle operations. Thermal Characteristics
Values are at TA = 25°C unless otherwise noted. Max.
Symbol PD Parameter …