Datasheet Toshiba 2SJ168 — Даташит

2SJ168
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168
High Speed Switching Applications
Analog Switch Applications
Interface Applications Unit: mm • Excellent switching time: ton = 14 ns (typ.) • High forward transfer admittance: |Yfs| = 100 mS (min)
@ID = −50 mA • Low on resistance: RDS (ON) = 1.3 Ω (typ.) @ ID = −50 mA • Enhancement-mode • Complementary to 2SK1062 Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit Drain-source voltage VDSS −60 V Gate-source voltage VGSS ±20 V DC ID −200 Pulse IDP −800 Drain power dissipation (Ta = 25°C) PD 200 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Drain current mA JEDEC ― JEITA SC-59 TOSHIBA 2-3F1F Weight: 0.012 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: This transistor is the electrostatic sensitive device. Please handle with caution. Marking Start of commercial production 1988-06 1 2014-03-01 2SJ168
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±10 V, VDS = 0 ⎯ ⎯ ±100 nA Drain cut-off current IDSS VDS = −60 V, VGS = 0 ⎯ ⎯ −10 μA −60 ⎯ ⎯ V Drain-source breakdown voltage V (BR) DSS ID = −1 mA, VGS = 0 Vth VDS = −10 V, ID = −1 mA −2 ⎯ −3.5 V Forward transfer admittance ⏐Yfs⏐ VDS = −10 V, ID = −50 mA 100 ⎯ ⎯ mS Drain-source ON resistance RDS (ON) ID = −50 mA, VGS = −10 V ⎯ 1.3 2.0 Ω Drain-source ON voltage VDS (ON) ID = −50 mA, VGS = −10 V ⎯ −65 −100 mV Gate threshold voltage Input capacitance Ciss VDS = −10 V, VGS = 0, f = 1 MHz ⎯ 73 85 pF Reverse transfer capacitance Crss VDS = −10 V, VGS = 0, f = 1 MHz ⎯ 15 22 pF Output capacitance Coss VDS = −10 V, VGS = 0, f = 1 MHz ⎯ 48 60 pF tr ⎯ 8 ⎯ ton ⎯ 14 ⎯ tf ⎯ 35 ⎯ ⎯ 100 Rise time
Turn-on time ns Switching time
Fall time
Turn-off Time toff VIN: tr, tf < 5 ns
D.U. ≤ 1% (Zout = 50 Ω) 2 2014-03-01 2SJ168 3 2014-03-01 2SJ168 4 2014-03-01 2SJ168
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), rese …