Datasheet ON Semiconductor MMBT200 — Даташит

PN200A / MMBT200 — PNP General-Purpose Amplifier PN200A / MMBT200
PNP General-Purpose Amplifier
Description
This device is designed for general-purpose amplifier
applications at collector currents to 300 mA. Sourced
from Process 68. C E
TO-92
SOT-23 EBC Figure 1. PN200A Device Package B Figure 2. MMBT200 Device Package Ordering Information
Part Number Marking Package Packing Method PN200A PN200A TO-92 3L Bulk MMBT200 N2 SOT-23 3L Tape and Reel Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VCEO Collector-Emitter Voltage -45 V VCBO Collector-Base Voltage -60 V VEBO Emitter-Base Voltage -6 V -500 mA -55 to +150 °C IC
TJ, TSTG Collector Current -Continuous
Operating and Storage Junction Temperature Range Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or lowduty cycle operations. © 1997 Semiconductor Components Industries, LLC.
October-2017, Rev. 2 Publication Order Number:
PN200A/D Values are at TA = 25°C unless otherwise noted. Symbol Max. Parameter (3) PN200A MMBT200(4) Unit Total Device Dissipation 625 350 mW Derate Above 25°C 5.0 2.8 mW/°C RθJC Thermal Resistance, Junction to Case 83.3 RθJA Thermal Resistance, Junction to Ambient 200 PD °C/W
357 °C/W Notes:
3. PCB size: FR-4 76 x 114 x 1.57 mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
4. Device mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch. Electrical Characteristics
Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit Off Characteristics BVCEO Collector-Base Breakdown Voltage IC = -10 μA, IB = 0
Collector-Emitter Breakdown
IC = -1.0 mA, IE = 0 …