Datasheet Fairchild SI9424DY — Даташит

Si9424DY
Single P-Channel 2.5V Specified PowerTrench MOSFET
General Description Features This P-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain superior
switching performance. • • Low gate charge (23nC typical). These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required. • Fast switching speed. • High performance trench technology for extremely
low RDS(ON). Applications • High power and current handling capability. •
•
• -8.0 A, -20 V. RDS(on) = 0.024 Ω @ VGS = -4.5 V
RDS(on) = 0.032 Ω @ VGS = -2.5 V. DC/DC converter
Load switch
Battery Protection D D 5 4 6 3 7 2 8 1 D
D SO-8 S S S G Absolute Maximum Ratings
Symbol TA = 25°C unless otherwise noted Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current PD Power Dissipation for Single Operation -Continuous (Note 1a) -Pulsed Ratings Units -20 V ±10
-8.0 V
A -50
(Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) Operating and Storage Junction Temperature Range TJ, Tstg W 1
-55 to +150 °C °C/W
°C/W Thermal Characteristics
RθJA …