Datasheet Vishay SQJ211ELP-T1_GE3 — Даташит

SQJ211ELP
www.vishay.com Vishay Siliconix Automotive P-Channel 100 V (D-S) 175 °C MOSFET
FEATURES PowerPAK® SO-8L Single • TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
D 6. 15 m m m
1 13 m 4
G 5. Top View 3
S 2
S 1
S • Material categorization: 
for definitions of compliance please see
www.vishay.com/doc?99912 S Bottom View PRODUCT SUMMARY
VDS (V) G -100 RDS(on) () at VGS = -10 V 0.0300 RDS(on) () at VGS = -4.5 V 0.0435 ID (A) -33.6 Configuration Single Package D P-Channel MOSFET PowerPAK SO-8L ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT Drain-source voltage VDS -100 Gate-source voltage VGS ± 20 TC = 25 °C Continuous drain current TC = 125 °C Continuous source current (diode conduction)
Pulsed drain current a
Single pulse avalanche current L = 0.1 mH Single pulse avalanche energy TC = 25 °C Maximum power dissipation a TC = 125 °C Operating junction and storage temperature range
Soldering recommendations (peak ID -19.4
-62 IDM -100 IAS -42 EAS 88 TJ, Tstg temperature) c, d V -33.6 IS PD UNIT 68
22
-55 to +175
260 A mJ
W …