Datasheet Vishay Si4466DY-T1-GE3 — Даташит

Si4466DY
Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY
VDS (V)
20 RDS(on) (Ω) ID (A) 0.009 at VGS = 4.5 V 13.5 0.013 at VGS = 2.5 V 11 • Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• Compliant to RoHS Directive 2002/95/EC D SO-8
S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4466DY-T1-E3 (Lead (Pb)-free)
Si4466DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C
TA = 70 °C Continuous Source Current (Diode Conduction)a IS
TA = 25 °C
TA = 70 °C PD 9.5 10.5 7.5
50 2.7 A 1.36 3.0 1.5 1.9 0.95 TJ, Tstg Operating Junction and Storage Temperature Range V 13.5 IDM Pulsed Drain Current Maximum Power Dissipationa ID Unit -55 to 150 W
°C THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain) Symbol
t ≤ 10 s
Steady State
Steady State RthJA
RthJF Typical Maximum 33 42 70 84 16 21 Unit
°C/W Notes: …