Datasheet Analog Devices HMC594LC3BTR-R5 — Даташит

HMC594LC3B
v03.0514 AMPLIFIERS -LOW NOISE -SMT GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2 -4 GHz
Typical Applications Features The HMC594LC3B is ideal for: Gain Flatness: ±0.2 dB • Fixed Microwave Noise Figure: 3 dB • Point-to-Multi-Point Radios Gain: 10 dB • Test & Measurement Equipment Output IP3: +36 dBm • Radar & Sensors DC Supply: +5V @ 95mA / +6V @ 100 mA • Military & Space 50 Ohm Matched Input/Output
RoHS Compliant 3x3 mm SMT package Functional Diagram General Description
The HMC594LC3B is a GaAs pHEMT MMIC Low
Noise Amplifier (LNA) which operates from 2 to 4
GHz. The HMC594LC3B features extremely flat
performance characteristics including 10 dB of small
signal gain, 3 dB of noise figure and output IP3 of
+36 dBm across the operating band. This high linearity
LNA is ideal for test & measurement equipment
and military assemblies due to its compact size,
consistent output power and DC blocked RF I/O’s.
The HMC594LC3B is also available in chip form as
the HMC594. Electrical Specifications, TA = +25° C, Vdd = +5V, Idd = 95 mA, Vdd = +6V, Idd = 100mA*
Parameter Min. Frequency Range
Gain Typ. Max. 2-4
7 Gain Variation Over Temperature Units
GHz 10 dB 0.015 dB/ °C Noise Figure 3 Input Return Loss 15 dB Output Return Loss 17 dB 21 dBm Saturated Output Power (Psat) 22 dBm Output Third Order Intercept (IP3) 36 Supply Current (Idd) 100 Output Power for 1 dB
Compression (P1dB) 18 4 dB dBm
130 mA *Adjust Vgg between -1.5V to -0.5V to achieve Idd = 100mA typical for 6V or Idd = 95mA typical for 5V. 1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no
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