Datasheet Analog Devices HMC594-SX — Даташит

HMC594
v01.0312 Amplifiers -Low Noise -CHIP GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 2 -4 GHz
Typical Applications Features The HMC594 is ideal for: Gain Flatness: ±0.2 dB • Fixed Microwave Noise Figure: 2.6 dB • Point-to-Multi-Point Radios Gain: 10 dB • Test & Measurement Equipment OIP3: +36 dBm • Radar & Sensors DC Supply: +6V @ 100 mA • Military & Space 50 Ohm Matched Input/Output
Die Size: 1.32 x 1.21 x 0.10 mm General Description Functional Diagram The HMC594 is a GaAs PHEMT MMIC Low Noise
Amplifier (LNA) chip which operates from 2 to 4 GHz.
The HMC594 features extremely flat performance
characteristics including 10 dB of small signal gain,
2.6 dB of noise figure and output IP3 of +36 dBm
across the operating band. This versatile LNA is ideal
for hybrid and MCM assemblies due to its compact
size, consistent output power and DC blocked RF
I/O’s. All data is measured with the chip in a 50 Ohm
test fixture connected via one 0.025 mm (1 mil) diameter bondwire of minimal length 0.31 mm (12 mil). Electrical Specifications, TA = +25° C, Vdd= +6V, Idd= 100mA*
Parameter Min. Frequency Range
Gain Typ. 7 Gain Variation Over Temperature dB
dB/ °C 2.6
15 Saturated Output Power (Psat) 18 GHz 10 Input Return Loss
Output Return Loss Units 0.015 Noise Figure Output Power for 1 dB Compression (P1dB) Max. 2-4 3.5 dB
dB 15 dB 21 dBm 22 dBm Output Third Order Intercept (IP3) 36 Supply Current (Idd) 100 dBm
130 mA *Adjust Vgg between -1.5V to -0.5V to achieve Idd = 100mA 1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no
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