Datasheet Analog Devices HMC797APM5ETR-R5 — Даташит

HMC797APM5E
v06.0418 1AMPLIFIERS -LINEAR & POWER -SMT GaAs pHEMT MMIC
1 WATT POWER AMPLIFIER, DC -22 GHz
Typical Applications Features The HMC797APM5E is ideal for: High P1dB Output Power: +29 dBm • Test Instrumentation High Psat Output Power: +31 dBm • Military & Space High Gain: 15 dB • Fiber Optics High Output IP3: +41 dBm
Supply Voltage: +10 V @ 400 mA
50 Ohm Matched Input/Output
32 Lead 5x5 mm SMT Package: 25 mm² Functional Diagram General Description
The HMC797APM5E is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between DC
and 22 GHz. The amplifier provides 15 dB of gain, +29
dBm of output power at 1 dB gain compression, +31
dBm of saturated output power, and 25% PAE while
requiring 400 mA from a +10 V supply. With up to +41
dBm of output IP3, the HMC797APM5E is ideal for high
linearity applications in military and space as well as test
equipment where high order modulations are used. This
versatile PA exhibits a positive gain slope from 2 to 20
GHz making it ideal for EW, ECM, Radar and test equipment applications. The HMC797APM5E amplifier I/Os
are internally matched to 50 Ohms facilitating integration
into mutli-chip-modules (MCMs), is packaged in a leadless QFN 5x5 mm surface mount package, and requires
no external matching components. Electrical Specifications, TA = +25° C, Vdd = +10 V, Vgg2 = +3.5 V, Idd = 400 mA*
Parameter Min. Frequency Range
Gain Typ. Max. Min. DC -12
12.5 Typ. Max. Min. 12 -18 14.5 13 15 13 Typ. Max. Units 18 -22 GHz 15.5 dB Gain Flatness ±0.7 ±0.5 ±0.5 dB Gain Variation Over Temperature 0.014 0.018 0.02 dB/ °C Input Return Loss 15 15 15 dB Output Return Loss 13 15 13 dB Output Power for 1 dB Compression (P1dB) 29 dBm Saturated Output Power (Psat) 27 29 …