Datasheet Analog Devices HMC7229-SX — Даташит

33 GHz to 40 GHz, GaAs, pHEMT, MMIC, 1 W
Power Amplifier with Power Detector
HMC7229 Data Sheet
FEATURES GENERAL DESCRIPTION 32 dBm PSAT with 22% PAE
P1dB POUT: 31.5 dBm
High OIP3: 39.5 dBm
High gain: 24.5 dB
50 Ω matched input/output The HMC7229 is a four-stage, gallium arsenide (GaAs),
pseudomorphic high electron mobility transfer (pHEMT),
monolithic microwave integrated circuit (MMIC), 1 W power
amplifier with an integrated temperature compensated on-chip
power detector, operating between 33 GHz and 40 GHz. The
HMC7229 provides a typical range of 23 dB to 24.5 dB of gain and
a range of 30 dBm to 32 dBm of saturated output power (PSAT) with
12% to 22% (typical) power added efficiency (PAE) range across
a band of 33 GHz to 40 GHz from a 6 V supply. With an excellent
OIP3 with a range of 37 dBm to 39.5 dBm across a band of
33 GHz to 40 GHz, the HMC7229 is ideal for linear applications
such as high capacity point to point or point to multipoint radios
or very small aperture terminal (VSAT)/satellite communications
(SATCOM) applications demanding 32 dBm of efficient saturated
output power. The radio frequency (RF) input/output ports are
internally matched and dc blocked for easy integration into …