Datasheet Analog Devices HMC-APH518-DIE — Даташит

HMC-APH518
v02.0208 LINEAR & POWER AMPLIFIERS -CHIP 3 GaAs HEMT MMIC 1 WATT POWER
AMPLIFIER, 21 -24 GHz Typical Applications Features This HMC-APH518 is ideal for: Output IP3: +39 dBm • Point-to-Point Radios P1dB: +30.5 dBm • Point-to-Multi-Point Radios Gain: 17 dB • VSAT Supply Voltage: +5V • Military & Space 50 Ohm Matched Input/Output
Die Size: 4.49 x 1.31 x 0.1 mm General Description Functional Diagram The HMC-APH518 is a two stage GaAs HEMT MMIC
1 Watt Power Amplifier which operates between
21 and 24 GHz. The HMC-APH518 provides 17 dB
of gain, and an output power of +30.5 dBm at 1 dB
compression from a +5V supply voltage. All bond
pads and the die backside are Ti/Au metallized and
the amplifier device is fully passivated for reliable
operation. The HMC-APH518 GaAs HEMT MMIC 1
Watt Power Amplifier is compatible with conventional
die attach methods, as well as thermocompression
and thermosonic wire bonding, making it ideal for
MCM and hybrid microcircuit applications. All data
Shown herein is measured with the chip in a 50 Ohm
environment and contacted with RF probes. Electrical Specifi cations[1], TA = +25° C, Vdd1=Vdd2= 5V, Idd1+Idd2= 950 mA [2]
Parameter Min. Frequency Range
Gain 16 Input Return Loss
Output Return Loss
Output power for 1dB Compression (P1dB) 28 Output Third Order Intercept (IP3) 37 Supply Current (Idd1+Idd2) Typ. Max. Units 21 -24 GHz 17 dB 15 dB 8 dB 30.5 dBm 39 dBm 950 mA [1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ. -0.5V) to achieve Idd1 = 350 mA, Idd2 = 600 mA 3 -202 For price,
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