Datasheet Analog Devices HMC659 — Даташит

HMC659
v02.0217 AMPLIFIERS -LINEAR & POWER -CHIP GaAs PHEMT MMIC
POWER AMPLIFIER, DC -15 GHz
Typical Applications Features The HMC659 is ideal for: P1dB Output Power: +26.5 dBm • Telecom Infrastructure Gain: 19 dB • Microwave Radio & VSAT Output IP3: +35 dBm • Military & Space Supply Voltage: +8V @ 300mA • Test Instrumentation 50 Ohm Matched Input/Output • Fiber Optics Die Size: 3.115 x 1.630 x 0.1 mm Functional Diagram General Description
The HMC659 is a GaAs MMIC PHEMT Distributed
Power Amplifier die which operates between DC and
15 GHz. The amplifier provides 19 dB of gain,
+35 dBm output IP3 and +26.5 dBm of output power
at 1 dB gain compression while requiring 300mA
from a +8V supply. Gain flatness is excellent at ±0.5
dB from DC to 10 GHz making the HMC659 ideal for
EW, ECM, Radar and test equipment applications.
The HMC659 amplifier I/Os are internally matched
to 50 Ohms facilitating integration into Mutli-ChipModules (MCMs). All data is taken with the chip
connected via two 0.025mm (1 mil) wire bonds of
minimal length 0.31 mm (12 mils). Electrical Specifications, TA = +25° C, Vdd= +8V, Vgg2= +3V, Idd= 300mA*
Parameter Min. Frequency Range
Gain Typ. Max. Min. DC -6
16.1 19.1 Typ. Max. Min. 6 -11
15.5 18.5 14.8 Typ. Max. Units 11 -15 GHz 17.8 dB Gain Flatness ±0.5 ±0.15 ±0.6 dB Gain Variation Over Temperature 0.013 0.018 0.025 dB/ °C Input Return Loss 19 17 15 dB Output Return Loss 18 17 15 dB 25 dBm Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat) 23 25.5 24 26.5 22.5 26 27 27 dBm Output Third Order Intercept (IP3) 35 32 29 dBm Noise Figure 2.5 2 3 dBc Supply Current
(Idd) (Vdd= 8V, Vgg1= -0.8V Typ.) 300 300 300 mA * Adjust Vgg1 between -2 to 0V to achieve Idd= 300mA typical. 1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other …