Datasheet Analog Devices HMC590LP5 — Даташит

HMC590LP5E
v04.1219 LINEAR & POWER AMPLIFIERS -SMT GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 6.0 -9.5 GHz
Typical Applications Features The HMC590LP5E is ideal for use as a power amplifier for: Saturated Output Power: +31.5 dBm @ 23% PAE • Point-to-Point Radios Gain: 21 dB • Point-to-Multi-Point Radios DC Supply: +7V @ 820 mA • Test Equipment & Sensors 50 Ohm Matched Input/Output • Military End-Use QFN Leadless SMT Packages, 25 mm2 Output IP3: +40 dBm • Space Functional Diagram General Description
The HMC590LP5E are high dynamic range GaAs
pHEMT MMIC 1 Watt Power Amplifiers which
operate from 6 to 9.5 GHz. The amplifier provides 21 dB of gain, +31 dBm of saturated power,
and 23% PAE from a +7V supply. This 50 Ohm
matched amplifier does not require any external
components and the RF I/Os are DC blocked for robust operation. For applications which require optimum OIP3, Idd should be set for 520 mA, to yield
+40 dBm OIP3. For applications which require
optimum output P1dB, Idd should be set for 820 mA,
to yield +30 dBm Output P1dB. Electrical Specifications, TA = +25° C, Vdd = +7V, Idd = 820 mA[1]
Parameter Min. Frequency Range Typ. Max. Min. 6-8 Gain 18 Units
GHz 21 dB 0.05 dB/ °C Input Return Loss 15 12 dB Output Return Loss 11 10 dB 30.5 dBm 31 dBm 40 40 dBm 820 820 mA Output Power for 1 dB
Compression (P1dB) 27 Saturated Output Power (Psat)
Output Third Order Intercept (IP3) 30
30.5 [2] Supply Current (Idd) 18 Max. 0.05 Gain Variation Over Temperature 21 Typ.
6 -9.5 27.5 [1] Adjust Vgg between -2 to 0V to achieve Idd= 820 mA typical.
[2] Measurement taken at 7V @ 520mA, Pin/Tone = -15 dBm 1 Information
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