Datasheet Analog Devices HMC327MS8GE — Даташит

HMC327MS8G / 327MS8GE
v06.1209 11 GaAs InGaP HBT MMIC
1/2 WATT POWER AMPLIFIER, 3 -4 GHz Typical Applications Features The HMC327MS8G(E) is ideal for: High Gain: 21 dB • Wireless Local Loop Saturated Power: +30 dBm @ 45% PAE • WiMAX & Fixed Wireless Output P1dB: +27 dBm • Access Points Single Supply: +5V • Subscriber Equipment Power Down Capability
Low External Part Count LINEAR & POWER AMPLIFIERS -SMT Compact MSOP Package: 14.8 mm2 Functional Diagram General Description
The HMC327MS8G(E) is a high efficiency GaAs
InGaP Heterojunction Bipolar Transistor (HBT) MMIC
power amplifier which operates between 3 and 4 GHz.
The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for
improved RF and thermal performance. With a minimum of external components, the amplifier provides
21 dB of gain, +30 dBm of saturated power at 45%
PAE from a single +5V supply. Power down capability
is available to conserve current consumption when the
amplifier is not in use. Electrical Specifi cations, TA = +25 °C, Vs = 5V, Vctl = 5V
Parameter Min. Frequency Range Typ. Max. 3-4 Gain 17 Gain Variation Over Temperature Units
GHz 21 24 dB 0.025 0.035 dB / °C Input Return Loss 15 Output Return Loss 8 dB 27 dBm 30 dBm 40 dBm Output Power for 1dB Compression (P1dB) 24 Saturated Output Power (Psat)
Output Third Order Intercept (IP3) 36 Noise Figure
Supply Current (Icq) Vctl* = 0V/5V dB 5 dB 0.002 / 250 mA Control Current (Ipd) Vctl* = 5V 7 mA Switching Speed tON, tOFF 40 ns *See Application Circuit for proper biasing configuration. 11 -2 For price,
delivery,
and to placeCorporation:
orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact
Hittite
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