Datasheet UnitedSiC UF3SC120040B7S — Даташит

1200V-35mW SiC FET
Rev. A, December 2020 DATASHEET
Description UF3SC120040B7S D (Tab) This SiC FET device is based on a unique ‘cascode’ circuit
configuration, in which a normally-on SiC JFET is co-packaged with a Si
MOSFET to produce a normally-off SiC FET device. The device’s
standard gate-drive characteristics allows for a true “drop-in
replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction
devices. Available in the D2PAK-7L package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics,
making it ideal for switching inductive loads , and any application
requiring standard gate drive. Features
Tab
w On-resistance RDS(on): 35mW (typ)
w Operating temperature: 175°C (max) G (1) 1 w Excellent reverse recovery: Qrr = 358nC
w Low body diode VFSD: 1.5V 7 w Low gate charge: QG = 43nC KS (2)
S (3-7) w Threshold voltage VG(th): 5V (typ) allowing 0 to 15V drive
w Package creepage and clearance distance > 6.1mm
w Kelvin source pin for optimized switching performance
w ESD protected, HBM class 2 Part Number Package Marking UF3SC120040B7S D2PAK-7L UF3SC120040B7S Typical applications
Any controlled environment such as
w Telecom and Server Power
w Industrial power supplies
w Power factor correction modules
w Motor drives …